Datasheet.Directory

{"V(FM) Max.(V) Forward Voltage":"4.0","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"100","Package":"Axial-10","I(O) Max.(A) Output Current":"1.25","@Temp. (°C) (Test Condition)":"25","@Temp (°C) (Test Condition)":"50","@V(R) (V)(Test Condition)":"1.2k","V(RRM)(V) Rep.Pk.Rev. Voltage":"1.2k","Military":"N","I(RM) Max.(A) Reverse Current":"5.0u","@I(FM) (A) (Test Condition)":"2.0","I(RM) Max.(A) Pk. Rev. Current":"50u"}...

{"V(FM) Max.(V) Forward Voltage":"4.0","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"100","Package":"Axial-10","I(O) Max.(A) Output Current":"1.25","@Temp. (°C) (Test Condition)":"25","@Temp (°C) (Test Condition)":"50","@V(R) (V)(Test Condition)":"1.5k","V(RRM)(V) Rep.Pk.Rev. Voltage":"1.5k","Military":"N","I(RM) Max.(A) Reverse Current":"5.0u","@I(FM) (A) (Test Condition)":"2.0","I(RM) Max.(A) Pk. Rev. Current":"50u"}...

{"V(FM) Max.(V) Forward Voltage":"4.0","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"100","Package":"Axial-10","I(O) Max.(A) Output Current":"1.25","@Temp. (°C) (Test Condition)":"25","@Temp (°C) (Test Condition)":"50","@V(R) (V)(Test Condition)":"1.8k","V(RRM)(V) Rep.Pk.Rev. Voltage":"1.8k","Military":"N","I(RM) Max.(A) Reverse Current":"5.0u","@I(FM) (A) (Test Condition)":"2.0","I(RM) Max.(A) Pk. Rev. Current":"50u"}...

{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"100u","t(rr) Max.(s) Rev.Rec. Time":"50n","Semiconductor Material":"Silicon","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"100","Package":"BR-4q","I(O) Max.(A) Output Current":"9.0","I(RM) Max.(A) Reverse Current":"5.0u","@V(R) (V)(Test Condition)":"50","V(RRM)(V) Rep.Pk.Rev. Voltage":"50","Military":"N","@I(F) (A) (Test Condition)":"0.5","@I(FM) (A) (Test Condition)":"2.0","V(FM) Max.(V) Forward Voltage":"1.3","@I(R) (A) (Test Condition)":"1....

{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"100u","t(rr) Max.(s) Rev.Rec. Time":"50n","Semiconductor Material":"Silicon","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"100","Package":"BR-4q","I(O) Max.(A) Output Current":"11","I(RM) Max.(A) Reverse Current":"5.0u","@V(R) (V)(Test Condition)":"50","V(RRM)(V) Rep.Pk.Rev. Voltage":"50","Military":"N","@I(F) (A) (Test Condition)":"0.5","@I(FM) (A) (Test Condition)":"2.0","V(FM) Max.(V) Forward Voltage":"1.3","@I(R) (A) (Test Condition)":"1.0...

{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"100u","t(rr) Max.(s) Rev.Rec. Time":"50n","Semiconductor Material":"Silicon","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"100","Package":"BR-4q","I(O) Max.(A) Output Current":"9.0","I(RM) Max.(A) Reverse Current":"5.0u","@V(R) (V)(Test Condition)":"100","V(RRM)(V) Rep.Pk.Rev. Voltage":"100","Military":"N","@I(F) (A) (Test Condition)":"0.5","@I(FM) (A) (Test Condition)":"2.0","V(FM) Max.(V) Forward Voltage":"1.3","@I(R) (A) (Test Condition)":"...

{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"100u","t(rr) Max.(s) Rev.Rec. Time":"75n","Semiconductor Material":"Silicon","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"75","Package":"BR-4q","I(O) Max.(A) Output Current":"5.5","I(RM) Max.(A) Reverse Current":"5.0u","@V(R) (V)(Test Condition)":"1.0k","V(RRM)(V) Rep.Pk.Rev. Voltage":"1.0k","Military":"N","@I(F) (A) (Test Condition)":"0.5","@I(FM) (A) (Test Condition)":"2.0","V(FM) Max.(V) Forward Voltage":"1.7","@I(R) (A) (Test Condition)":...

{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"100u","t(rr) Max.(s) Rev.Rec. Time":"75n","Semiconductor Material":"Silicon","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"75","Package":"BR-4q","I(O) Max.(A) Output Current":"7.0","I(RM) Max.(A) Reverse Current":"5.0u","@V(R) (V)(Test Condition)":"1.0k","V(RRM)(V) Rep.Pk.Rev. Voltage":"1.0k","Military":"N","@I(F) (A) (Test Condition)":"0.5","@I(FM) (A) (Test Condition)":"2.0","V(FM) Max.(V) Forward Voltage":"1.7","@I(R) (A) (Test Condition)":...

{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"100u","t(rr) Max.(s) Rev.Rec. Time":"50n","Semiconductor Material":"Silicon","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"100","Package":"BR-4q","I(O) Max.(A) Output Current":"11","I(RM) Max.(A) Reverse Current":"5.0u","@V(R) (V)(Test Condition)":"100","V(RRM)(V) Rep.Pk.Rev. Voltage":"100","Military":"N","@I(F) (A) (Test Condition)":"0.5","@I(FM) (A) (Test Condition)":"2.0","V(FM) Max.(V) Forward Voltage":"1.3","@I(R) (A) (Test Condition)":"1...

{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"100u","t(rr) Max.(s) Rev.Rec. Time":"50n","Semiconductor Material":"Silicon","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"100","Package":"BR-4q","I(O) Max.(A) Output Current":"9.0","I(RM) Max.(A) Reverse Current":"5.0u","@V(R) (V)(Test Condition)":"200","V(RRM)(V) Rep.Pk.Rev. Voltage":"200","Military":"N","@I(F) (A) (Test Condition)":"0.5","@I(FM) (A) (Test Condition)":"2.0","V(FM) Max.(V) Forward Voltage":"1.3","@I(R) (A) (Test Condition)":"...

{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"100u","t(rr) Max.(s) Rev.Rec. Time":"50n","Semiconductor Material":"Silicon","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"100","Package":"BR-4q","I(O) Max.(A) Output Current":"11","I(RM) Max.(A) Reverse Current":"5.0u","@V(R) (V)(Test Condition)":"200","V(RRM)(V) Rep.Pk.Rev. Voltage":"200","Military":"N","@I(F) (A) (Test Condition)":"0.5","@I(FM) (A) (Test Condition)":"2.0","V(FM) Max.(V) Forward Voltage":"1.3","@I(R) (A) (Test Condition)":"1...

{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"100u","t(rr) Max.(s) Rev.Rec. Time":"50n","Semiconductor Material":"Silicon","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"100","Package":"BR-4q","I(O) Max.(A) Output Current":"9.0","I(RM) Max.(A) Reverse Current":"5.0u","@V(R) (V)(Test Condition)":"400","V(RRM)(V) Rep.Pk.Rev. Voltage":"400","Military":"N","@I(F) (A) (Test Condition)":"0.5","@I(FM) (A) (Test Condition)":"2.0","V(FM) Max.(V) Forward Voltage":"1.3","@I(R) (A) (Test Condition)":"...