Product Datasheet Search Results:
- KV2101
- Advanced Semiconductor, Inc.
- Silicon Hyperabrupt Tuning Varactor
- KV2101-150
- Advanced Semiconductor, Inc.
- Silicon Hyperabrupt Tuning Varactor
- KV2101A
- Advanced Semiconductor, Inc.
- Silicon Hyperabrupt Tuning Varactor
- KV2101
- Knox Semiconductor, Inc.
- Varactor Diodes
- KV2101A
- Knox Semiconductor, Inc.
- Varactor Diodes
- KV2101B
- Knox Semiconductor, Inc.
- 30V Vrrm, 6.8pF Capacitance Varactor Diode
- KV2101C
- Knox Semiconductor, Inc.
- 30V Vrrm, 6.8pF Capacitance Varactor Diode
- KV2101D
- Knox Semiconductor, Inc.
- 30V Vrrm, 6.8pF Capacitance Varactor Diode
- KV2101B
- Knox Semiconductor, Inc.
- 30V Vrrm, 6.8pF Capacitance Varactor Diode
- KV2101C
- Knox Semiconductor, Inc.
- 30V Vrrm, 6.8pF Capacitance Varactor Diode
Product Details Search Results:
Knoxsemiconductor.com/KV2101B
{"C1/C2 Min. Capacitance Ratio":"2.5","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"450","Package":"DO-7","P(D) Max.(W) Power Dissipation":"400m","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"6.8p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4","@V(Q min)(V) (Test Condition)":"4"}...
882 Bytes - 11:48:55, 01 November 2024
Knoxsemiconductor.com/KV2101C
{"C1/C2 Min. Capacitance Ratio":"2.5","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"450","Package":"DO-7","P(D) Max.(W) Power Dissipation":"400m","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"6.8p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4","@V(Q min)(V) (Test Condition)":"4"}...
881 Bytes - 11:48:55, 01 November 2024
Knoxsemiconductor.com/KV2101D
{"C1/C2 Min. Capacitance Ratio":"2.5","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"450","Package":"DO-7","P(D) Max.(W) Power Dissipation":"400m","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"6.8p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4","@V(Q min)(V) (Test Condition)":"4"}...
882 Bytes - 11:48:55, 01 November 2024
Microsemi.com/KV2101
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Frequency Band":"ULTRA HIGH FREQUENCY","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"5","Variable Capacitance Diode Classification":"HYPERABRUPT","Package Style":"LONG FORM","Breakdown Voltage-Min":"22 V","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"11.5 pF","Diode Cap Tolerance":"8.69 %","Quality Factor-Min":"300","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":...
1289 Bytes - 11:48:55, 01 November 2024
Microsemi.com/KV2101-11
{"Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Frequency Band":"ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"22 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"5.4","Variable Capacitance Diode Classification":"HYPERABRUPT","Number of Terminals":"2","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"500 pF","Case Connection":"ISOLATED","Quality Factor-Min":"300","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape...
1302 Bytes - 11:48:55, 01 November 2024
Microsemi.com/KV2101-15
{"Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Frequency Band":"ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"22 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"5.4","Variable Capacitance Diode Classification":"HYPERABRUPT","Number of Terminals":"2","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"200 pF","Case Connection":"ISOLATED","Quality Factor-Min":"300","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape...
1302 Bytes - 11:48:55, 01 November 2024
Microsemi.com/KV2101A
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Frequency Band":"ULTRA HIGH FREQUENCY","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"5","Variable Capacitance Diode Classification":"HYPERABRUPT","Package Style":"LONG FORM","Breakdown Voltage-Min":"22 V","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"11.5 pF","Diode Cap Tolerance":"5.21 %","Quality Factor-Min":"300","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":...
1296 Bytes - 11:48:55, 01 November 2024
Microsemi.com/KV2101A-00
{"Status":"ACTIVE","Diode Type":"VARIABLE CAPACITANCE DIODE"}...
738 Bytes - 11:48:55, 01 November 2024
Microsemi.com/KV2101A-11
{"Status":"ACTIVE","Diode Type":"VARIABLE CAPACITANCE DIODE"}...
740 Bytes - 11:48:55, 01 November 2024
Microsemi.com/KV2101A-15
{"Status":"ACTIVE","Diode Type":"VARIABLE CAPACITANCE DIODE"}...
739 Bytes - 11:48:55, 01 November 2024
Microsemi.com/KV2101A-17
{"Status":"ACTIVE","Diode Type":"VARIABLE CAPACITANCE DIODE"}...
741 Bytes - 11:48:55, 01 November 2024
Microsemi.com/KV2101A-30
{"Status":"ACTIVE","Diode Type":"VARIABLE CAPACITANCE DIODE"}...
738 Bytes - 11:48:55, 01 November 2024
Documentation and Support
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6AV2101-3AA03-0AE5.pdf | 116.77 | 1 | Request | |
6AV2101-0AA07-0AA5.pdf | 7.17 | 1 | Request | |
6AV2101-0AA00-0UA0.pdf | 99.41 | 1 | Request | |
6AV2101-2AA04-0BD5.pdf | 99.41 | 1 | Request | |
6AV2101-4AB00-0UE0.pdf | 99.41 | 1 | Request | |
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6AV2101-4BB00-0UE0.pdf | 99.41 | 1 | Request | |
6AV2101-0AA02-0AH5.pdf | 73.79 | 1 | Request | |
6AV2101-3AA00-0UE0.pdf | 99.41 | 1 | Request | |
6AV2101-0AA01-0AA5.pdf | 36.16 | 1 | Request | |
6AV2101-0AA05-0AH5.pdf | 187.89 | 1 | Request | |
6AV2101-4BB00-0UK0.pdf | 99.41 | 1 | Request |