Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Continuous Drain Current":"5.5(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Power Dissipation":"25(W)","Operating Temp Range":"-55C to 150C","Package Type":"LLCC","Type":"Power MOSFET","Pin Count":"18","Number of Elements":"1"}...

{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"98 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"22 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDU...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"420 mOhm @ 5.5A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/557","Package \/ Case":"18-BQFN Exposed Pad","Supplier Device Package":"18-ULCC (9.14x7.49)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6796,98U, 6800,02U","Power - Max":"800mW","Standard Package":"1","Drain to Source Voltage (...