Datasheet.Directory

{"Category":"MOSFET","Maximum Drain Source Voltage":"30 V","Dose Level":"100","Typical Turn-Off Delay Time":"35(Max) ns","Description":"Value","Maximum Continuous Drain Current":"22 A","Package":"3SMD-0.5","Mounting":"Surface Mount","Typical Rise Time":"100(Max) ns","Typical Turn-On Delay Time":"25(Max) ns","Rad Hard":"Yes","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"20@12V mOhm","Maximum Gate Source Voltage":"\u00b120 V","Manufacturer":"International Rectifier","Typi...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"155 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"22 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0200 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"88 A","Channel Type":"N...