Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"2.5(W)","Continuous Drain Current":"13(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.25V @ 25\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"13A (Ta)","Gate Charge (Qg) @ Vgs":"14nC @ 4.5V","Product Photos":"8-SOIC","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"10 mOhm @ 13A, 10V","Dat...

{"Category":"MOSFET","Maximum Drain Source Voltage":"30 V","Typical Rise Time":"6.3 ns","Typical Turn-Off Delay Time":"11 ns","Description":"Value","Maximum Continuous Drain Current":"13 A","Package":"8SOIC","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"8.7 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"10@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"3.8 ns"}...