Product Datasheet Search Results:

IRF520.pdf7 Pages, 91 KB, Original
IRF520
Fairchild Semiconductor
9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET
IRF520A.pdf6 Pages, 166 KB, Original
IRF520AJ69Z.pdf7 Pages, 244 KB, Original
IRF520AJ69Z
Fairchild Semiconductor Corporation
9.2 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET
IRF520.pdf4 Pages, 200 KB, Original
IRF520.pdf4 Pages, 200 KB, Original
IRF520
Frederick Components
Power MOSFET Selection Guide
IRF520.pdf1 Pages, 56 KB, Scan
IRF520
Motorola
Switchmode Datasheet
IRF520.pdf2 Pages, 132 KB, Scan
IRF520
General Electric
Power Transistor Data Book 1985
IRF520.pdf5 Pages, 175 KB, Scan
IRF520
Harris Semiconductor
Power MOSFET Data Book 1990
IRF520R.pdf5 Pages, 193 KB, Scan
IRF520R
Harris Semiconductor
Power MOSFET Data Book 1990
IRF520NPBF.pdf9 Pages, 175 KB, Original
IRF520NPBF
Infineon Technologies Ag
Trans MOSFET N-CH Si 100V 9.7A 3-Pin(3+Tab) TO-220AB Tube
IRF520NSTRLPBF.pdf11 Pages, 411 KB, Original
IRF520NSTRLPBF
Infineon Technologies Ag
Trans MOSFET N-CH 100V 9.7A 3-Pin(2+Tab) D2PAK T/R
IRF520.pdf7 Pages, 56 KB, Original
IRF520
Intersil Corporation
9.2A, 100V, 0.270 ?, N-Channel Power MOSFET

Product Details Search Results:

Fairchildsemi.com/IRF520AJ69Z
{"Status":"ACTIVE-UNCONFIRMED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"37 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"113 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"9.2 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Ty...
1490 Bytes - 15:41:25, 21 November 2024
Infineon.com/IRF520NPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"9.7(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Rail/Tube","Power Dissipation":"48(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1527 Bytes - 15:41:25, 21 November 2024
Infineon.com/IRF520NSTRLPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"9.7(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1528 Bytes - 15:41:25, 21 November 2024
Irf.com/IRF520N
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Design Resources":"IRF520N Saber Model IRF520N Spice Model","Product Photos":"TO-220AB PKG","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"50","Supplier Device Package":"TO-220AB","Datasheets":"IRF520N","Rds On (Max) @ Id, Vgs":"200 mOhm @ 5.7A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"48W","Other Names":"*IRF520N","Package / Case":"TO-...
1613 Bytes - 15:41:25, 21 November 2024
Irf.com/IRF520N-002
{"Status":"DISCONTINUED","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"9.5 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":...
1378 Bytes - 15:41:25, 21 November 2024
Irf.com/IRF520N-002PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.2000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor A...
1445 Bytes - 15:41:25, 21 November 2024
Irf.com/IRF520N-003
{"Status":"DISCONTINUED","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"9.5 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":...
1375 Bytes - 15:41:25, 21 November 2024
Irf.com/IRF520N-003PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.2000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor A...
1445 Bytes - 15:41:25, 21 November 2024
Irf.com/IRF520N-004
{"Status":"DISCONTINUED","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"9.5 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":...
1376 Bytes - 15:41:25, 21 November 2024
Irf.com/IRF520N-004PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.2000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor A...
1445 Bytes - 15:41:25, 21 November 2024
Irf.com/IRF520N-005
{"Status":"DISCONTINUED","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"9.5 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":...
1377 Bytes - 15:41:25, 21 November 2024
Irf.com/IRF520N-005PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.2000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor A...
1445 Bytes - 15:41:25, 21 November 2024

Documentation and Support

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