Product Datasheet Search Results:
- FHBCP55
- Fenghua Advanced Technology
- 1 A, 60 V, NPN, Si, POWER TRANSISTOR
- FHBCP55-10
- Fenghua Advanced Technology
- 1 A, 60 V, NPN, Si, POWER TRANSISTOR
- FHBCP55-16
- Fenghua Advanced Technology
- 1 A, 60 V, NPN, Si, POWER TRANSISTOR
Product Details Search Results:
Fhjh.com.cn/FHBCP55
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"SOT-223, 4 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.5 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"63","Collector Current-Max (IC)":"1 A","Collector-emitter Voltage-Max":"60 V","Transistor Application":"AMPLIFIER","Number of Elements":"1","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Package Shape":...
1326 Bytes - 08:24:00, 05 January 2025
Fhjh.com.cn/FHBCP55-10
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"SOT-223, 4 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.5 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"63","Collector Current-Max (IC)":"1 A","Collector-emitter Voltage-Max":"60 V","Transistor Application":"AMPLIFIER","Number of Elements":"1","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Package Shape":...
1344 Bytes - 08:24:00, 05 January 2025
Fhjh.com.cn/FHBCP55-16
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"SOT-223, 4 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.5 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"100","Collector Current-Max (IC)":"1 A","Collector-emitter Voltage-Max":"60 V","Transistor Application":"AMPLIFIER","Number of Elements":"1","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Package Shape"...
1343 Bytes - 08:24:00, 05 January 2025