Product Datasheet Search Results:
- 2N6784TX
- Fairchild Semiconductor
- 2.25A, 200V, 1.500 ?, N-Channel Power MOSFET
- 2N6784TXV
- Fairchild Semiconductor
- 2.25A, 200V, 1.500 ?, N-Channel Power MOSFET
- 2N6784TX
- International Rectifier
- 2.25 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
- 2N6784TXV
- International Rectifier
- 2.25 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
Product Details Search Results:
Irf.com/2N6784TX
{"Status":"DISCONTINUED","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"9 A","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"2.25 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND"...
1390 Bytes - 18:05:14, 27 December 2024
Irf.com/2N6784TXV
{"Status":"DISCONTINUED","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"9 A","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"2.25 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND"...
1394 Bytes - 18:05:14, 27 December 2024
Documentation and Support
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7B35E022N673G1.pdf | 0.07 | 1 | Request | |
7B35E6472N674H2.pdf | 0.07 | 1 | Request | |
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