Product Datasheet Search Results:
- 2N6768
- Defense Supply Center Columbus
- N-Channel Silicon FET
- JAN2N6768
- Defense Supply Center Columbus
- N-Channel Silicon FET
- JANHC2N6768
- Defense Supply Center Columbus
- N-Channel Silicon FET
- JANKC2N6768
- Defense Supply Center Columbus
- N-Channel Silicon FET
- JANS2N6768
- Defense Supply Center Columbus
- N-Channel Silicon FET
- JANTX2N6768
- Defense Supply Center Columbus
- N-Channel Silicon FET
- JANTXV2N6768
- Defense Supply Center Columbus
- N-Channel Silicon FET
- 2N6768
- Fairchild Semiconductor
- N-Channel Power MOSFETs, 15A, 350V/400V
- 2N6768
- Motorola / Freescale Semiconductor
- TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39
- 2N6768JTXV
- Motorola
- European Master Selection Guide 1986
- 2N6768
- Harris Semiconductor
- Power MOSFET Data Book 1990
- JANTX2N6768
- Infineon Technologies Ag
- Trans MOSFET N-CH 400V 14A 3-Pin(2+Tab) TO-3
- JANTXV2N6768
- Infineon Technologies Ag
- Trans MOSFET N-CH 400V 14A 3-Pin(2+Tab) TO-3
- 2N6768
- International Rectifier
- 14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204
- 2N6768JANTX
- International Rectifier
- 100V THRU 500V, UP TO 38A, N-CHANNEL, ENHANCEMENT MODE MOSFET POWER TRANSISTOR 2TO-204
- 2N6768JANTXV
- International Rectifier
- 100V THRU 500V, UP TO 38A, N-CHANNEL, ENHANCEMENT MODE MOSFET POWER TRANSISTOR 2TO-204
- 2N6768PBF
- International Rectifier
- 14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204
- 2N6768SCC5205/013
- International Rectifier
- 400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
- 2N6768SCC5205/013PBF
- International Rectifier
- 400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
- JANTX2N6768
- International Rectifier
- 14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204
- JANTXV2N6768
- International Rectifier
- 14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204
- 2N6768
- Ixys Corporation
- High Voltage Power MOSFETs
- JANTX2N6768
- Microchip Technology
- Trans MOSFET N-CH 400V 14A 3-Pin(2+Tab) TO-3
- 2N6768
- Microsemi Commercial Components Group
- MOSFET N-CH 400V TO-204AE TO-3
- 2N6768JANTX
- Microsemi
- Trans MOSFET 400V 14A 3-Pin(2+Tab) TO-3
- 2N6768T1
- Microsemi Corp.
- 14 A, 400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
- 2N6768TX
- Microsemi Corp.
- 14 A, 400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
- 2N6768TXV
- Microsemi Corp.
- 14 A, 400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
- JAN2N6768
- Microsemi Hi-rel [mil]
- MOSFET N-CH TO-204AE TO-3
- JAN2N6768T1
- Microsemi Corp.
- 14 A, 400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
- JANS2N6768
- Microsemi Corp.
- 14 A, 400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
- JANTX2N6768
- Microsemi Hi-rel [mil]
- MOSFET N-CH TO-204AE TO-3
- JANTX2N6768T1
- Microsemi Corp.
- 14 A, 400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
- JANTXV2N6768
- Microsemi Hi-rel [mil]
- MOSFET N-CH
- JANTXV2N6768T1
- Microsemi Corp.
- 14 A, 400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
Product Details Search Results:
Dla.mil/2N6768+JAN
{"C(iss) Max. (F)":"3.0n","Absolute Max. Power Diss. (W)":"150","g(fs) Max, (S) Trans. conduct,":"24","I(D) Abs. Max.(A) Drain Curr.":"9.0","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"150n","r(DS)on Max. (Ohms)":"300m","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"8.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"9.0","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"2.0","@(VDS) (V) (Test Condition)":"20","V(GS)th Min. (V)":"4...
1317 Bytes - 00:13:34, 20 September 2024
Dla.mil/2N6768+JANTX
{"C(iss) Max. (F)":"3.0n","Absolute Max. Power Diss. (W)":"150","g(fs) Max, (S) Trans. conduct,":"24","I(D) Abs. Max.(A) Drain Curr.":"9.0","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"150n","r(DS)on Max. (Ohms)":"300m","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"8.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"9.0","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"2.0","@(VDS) (V) (Test Condition)":"20","V(GS)th Min. (V)":"4...
1329 Bytes - 00:13:34, 20 September 2024
Dla.mil/2N6768+JANTXV
{"C(iss) Max. (F)":"3.0n","Absolute Max. Power Diss. (W)":"150","g(fs) Max, (S) Trans. conduct,":"24","I(D) Abs. Max.(A) Drain Curr.":"9.0","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"150n","r(DS)on Max. (Ohms)":"300m","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"8.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"9.0","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"2.0","@(VDS) (V) (Test Condition)":"20","V(GS)th Min. (V)":"4...
1334 Bytes - 00:13:34, 20 September 2024
Infineon.com/JANTX2N6768
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"150(W)","Continuous Drain Current":"14(A)","Mounting":"Through Hole","Drain-Source On-Volt":"400(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-3","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1458 Bytes - 00:13:34, 20 September 2024
Infineon.com/JANTXV2N6768
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"150(W)","Continuous Drain Current":"14(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"400(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-3","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1455 Bytes - 00:13:34, 20 September 2024
Irf.com/2N6768
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"11.3 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1476 Bytes - 00:13:34, 20 September 2024
Irf.com/2N6768JANTX
{"Category":"MOSFET","Mounting":"Through Hole","Manufacturer":"International Rectifier","Description":"Value","Package":"3TO-204AE"}...
1102 Bytes - 00:13:34, 20 September 2024
Irf.com/2N6768JANTXV
{"Category":"MOSFET","Mounting":"Through Hole","Manufacturer":"International Rectifier","Description":"Value","Package":"3TO-204AE"}...
1091 Bytes - 00:13:34, 20 September 2024
Irf.com/2N6768PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"11.3 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"...
1542 Bytes - 00:13:34, 20 September 2024
Irf.com/2N6768SCC5205/013
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.3000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"2","DS Breakdown Voltage-Min":"400 V","Num...
1286 Bytes - 00:13:34, 20 September 2024
Irf.com/2N6768SCC5205/013PBF
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.3000 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Termi...
1353 Bytes - 00:13:34, 20 September 2024
Irf.com/JANTX2N6768
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"11.3 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1504 Bytes - 00:13:34, 20 September 2024
Irf.com/JANTXV2N6768
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"11.3 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1511 Bytes - 00:13:34, 20 September 2024
Microchip.com/JANTX2N6768
1059 Bytes - 00:13:34, 20 September 2024
Microsemi.com/2N6768
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Package \/ Case":"TO-204AE","Supplier Device Package":"TO-3","Datasheets":"2N6764,66,68,70","Rds On (Max) @ Id, Vgs":"400 mOhm @ 14A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Bulk","Power - Max":"4W","Standard Package":"1","Drain to Source Voltage (Vdss)":"400V","Current - Continuous Drain (Id) @ 25\u00b0C":"14...
1449 Bytes - 00:13:34, 20 September 2024
Microsemi.com/2N6768JANTX
{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"14 A","Mounting":"Through Hole","Drain-Source On-Volt":"400 V","Power Dissipation":"150 W","Operating Temp Range":"-55C to 150C","Package Type":"TO-3","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1440 Bytes - 00:13:34, 20 September 2024
Microsemi.com/2N6768T1
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Package \/ Case":"TO-254-3, TO-254AA (Straight Leads)","Supplier Device Package":"TO-254AA","Datasheets":"2N6764,66,68,70T1","Rds On (Max) @ Id, Vgs":"400 mOhm @ 14A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Bulk","Power - Max":"4W","Standard Package":"1","Drain to Source Voltage (Vdss)":"400V","Current - Conti...
1498 Bytes - 00:13:34, 20 September 2024
Microsemi.com/2N6768TX
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"25 A","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"14 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","...
1378 Bytes - 00:13:34, 20 September 2024
Microsemi.com/2N6768TXV
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"25 A","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"14 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","...
1385 Bytes - 00:13:34, 20 September 2024
Microsemi.com/JAN2N6768
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"400 mOhm @ 14A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/543","Package \/ Case":"TO-204AE","Supplier Device Package":"*","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6764,66,68,70","Power - Max":"4W","Standard Package":"1","Drain to Source Voltage (Vdss)":"400V","Current - Continuous Dra...
1542 Bytes - 00:13:34, 20 September 2024
Microsemi.com/JAN2N6768T1
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"400 mOhm @ 14A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/543","Package \/ Case":"TO-254-3, TO-254AA (Straight Leads)","Supplier Device Package":"TO-254AA","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6764,66,68,70T1","Power - Max":"4W","Standard Package":"1","Drain to Source Voltage (Vds...
1590 Bytes - 00:13:34, 20 September 2024
Microsemi.com/JANS2N6768
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.3000 ohm","Number of Terminals":"2","DS Bre...
1262 Bytes - 00:13:34, 20 September 2024
Microsemi.com/JANTX2N6768
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"400 mOhm @ 14A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/543","Package \/ Case":"TO-204AE","Supplier Device Package":"TO-3","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6764,66,68,70","Power - Max":"4W","Standard Package":"1","Drain to Source Voltage (Vdss)":"400V","Current - Continuous ...
1560 Bytes - 00:13:34, 20 September 2024
Microsemi.com/JANTX2N6768T1
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"400 mOhm @ 14A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/543","Package \/ Case":"TO-254-3, TO-254AA (Straight Leads)","Supplier Device Package":"TO-3","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6764,66,68,70T1","Power - Max":"4W","Standard Package":"1","Drain to Source Voltage (Vdss)":...
1602 Bytes - 00:13:34, 20 September 2024
Microsemi.com/JANTXV2N6768
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"400 mOhm @ 14A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/543","Package \/ Case":"TO-204AE","Supplier Device Package":"TO-204AE (TO-3)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6764,66,68,70","Power - Max":"4W","Standard Package":"1","Drain to Source Voltage (Vdss)":"400V","Current - ...
1566 Bytes - 00:13:34, 20 September 2024
Microsemi.com/JANTXV2N6768T1
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"400 mOhm @ 14A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/543","Package \/ Case":"TO-254-3, TO-254AA (Straight Leads)","Supplier Device Package":"TO-254AA","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6764,66,68,70T1","Power - Max":"4W","Standard Package":"1","Drain to Source Voltage (Vds...
1605 Bytes - 00:13:34, 20 September 2024
Semelab.co.uk/2N6768
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"11.3 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"400 V","C...
1413 Bytes - 00:13:34, 20 September 2024
Semelab.co.uk/2N6768-QR
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"11.3 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"400 V","C...
1434 Bytes - 00:13:34, 20 September 2024
Semelab.co.uk/2N6768R1
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"11.3 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMI...
1476 Bytes - 00:13:34, 20 September 2024