ER OUTPUT A V+ of output buffers and amplifiers are internally connected. Figure 2. Connection Diagram MAXIMUM RATINGS Symbol Value Unit Supply Voltage (Note 1) Rating VS 44 VDC or 22 V Power Dissipation, Tamb = 25 C (Still Air) (Note 2) NE5517N, NE5517AN NE5517D, AU5517D PD Thermal Resistance, Junction-to-Ambient D Package N Package RqJA Differential Input Voltage Diode Bias Current 1500 1125 140 94 mW C/W VIN 5.0 V ID 2.0 mA IABC 2.0 mA Output Short-Circuit Duration ISC Indefinite Buffer Output Current (Note 3) IOUT 20 Operating Temperature Range NE5517N, NE5517AN AU5517T Tamb Amplifier Bias Current Operating Junction Temperature 0 C to +70 C -40 C to +125 C mA C TJ 150 DC Input Voltage VDC +VS to -VS Storage Temperature Range Tstg -65 C to +150 C C Lead Soldering Temperature (10 sec max) Tsld 230 C C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure
ER OUTPUT A V+ of output buffers and amplifiers are internally connected. Figure 2. Connection Diagram MAXIMUM RATINGS Symbol Value Unit Supply Voltage (Note 1) Rating VS 44 VDC or 22 V Power Dissipation, Tamb = 25 C (Still Air) (Note 2) NE5517N, NE5517AN NE5517D, AU5517D PD Thermal Resistance, Junction-to-Ambient D Package N Package RqJA Differential Input Voltage Diode Bias Current 1500 1125 140 94 mW C/W VIN 5.0 V ID 2.0 mA IABC 2.0 mA Output Short-Circuit Duration ISC Indefinite Buffer Output Current (Note 3) IOUT 20 Operating Temperature Range NE5517N, NE5517AN AU5517T Tamb Amplifier Bias Current Operating Junction Temperature 0 C to +70 C -40 C to +125 C mA C TJ 150 DC Input Voltage VDC +VS to -VS Storage Temperature Range Tstg -65 C to +150 C C Lead Soldering Temperature (10 sec max) Tsld 230 C C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure
ate the change of offset voltage due to a burst in the bias current IABC, hence eliminating the audible noise that could otherwise be heard in high quality audio applications. http://onsemi.com MARKING DIAGRAMS AU5517D AWLYWW SOIC-16 D SUFFIX CASE 751B 16 NE5517D AWLYWW 1 Features * * * * * Constant Impedance Buffers VBE of Buffer is Constant with Amplifier IBIAS Change Excellent Matching Between Amplifiers Linearizing Diodes High Output Signal-to-Noise Ratio PDIP-16 N SUFFIX CASE 648 Applications * * * * * * NE5517AN AWLYYWW NE5517N AWLYYWW 16 Multiplexers Timers Electronic Music Synthesizers Dolby HX Systems Current-controlled Amplifiers, Filters Current-controlled Oscillators, Impedances 1 A WL YY, Y WW = Assembly Location = Wafer Lot = Year = Work Week PIN CONNECTIONS N, D Packages IABCa 1 16 IABCb Da 2 15 Db +INa 3 14 +INb -INa 4 13 -INb VOa 5 12 VOb V- 6 11 V+ INBUFFERa 7 10 INBUFFERb VOBUFFERa 8 9 VOBUFFERb (Top View) ORDERING INFORMATION See detailed ordering and shipping information in t
t B ORDERING INFORMATION TEMPERATURE RANGE ORDER CODE DWG # 16-Pin Plastic Dual In-Line Package (DIP) DESCRIPTION 0 to +70 C NE5517N SOT38-4 16-Pin Plastic Dual In-Line Package (DIP) 0 to +70 C NE5517AN SOT38-4 16-Pin Small Outline (SO) Package 0 to +70 C NE5517D SOT109-1 16-Pin Small Outline (SO) Package -40 to +125 C AU5517D SOT109-1 Dolby is a registered trademark of Dolby Laboratories Inc., San Francisco, Calif. 2002 Dec 06 2 Philips Semiconductor Product data NE5517/NE5517A/ AU5517 Dual operational transconductance amplifier CIRCUIT SCHEMATIC V+ 11 D4 D6 Q12 Q14 Q6 Q13 7,10 Q10 8,9 Q7 Q11 2,15 VOUTPUT D3 D2 Q4 -INPUT 4,13 Q5 5,12 +INPUT 3,14 Q15 1,16 AMP BIAS INPUT Q16 Q3 Q2 D7 Q9 R1 Q1 D8 Q8 D1 D5 V- 6 SL00307 Figure 2. Circuit Schematic CONNECTION DIAGRAM B AMP BIAS INPUT B DIODE BIAS B INPUT (+) B INPUT (-) 16 15 14 13 B OUTPUT V+ (1) B BUFFER INPUT B BUFFER OUTPUT 12 11 10 9 5 6 7 8 - B + + A - 1 AMP BIAS INPUT A 2 DIODE BIAS A 3 4 INPUT (+) A INPUT (-) A OUTPUT A V- NOTE: 1. V+ of outpu
BUFFER OUTPUT A V+ of output buffers and amplifiers are internally connected. Figure 2. Connection Diagram MAXIMUM RATINGS Rating Symbol Value Supply Voltage (Note 1) VS 44 VDC or 22 Power Dissipation, Tamb = 25 C (Still Air) (Note 2) PD NE5517N, NE5517AN NE5517D, AU5517D Differential Input Voltage Diode Bias Current Unit V mW 1500 1125 VIN 5.0 V ID 2.0 mA mA Amplifier Bias Current IABC 2.0 Output Short-Circuit Duration ISC Indefinite Buffer Output Current (Note 3) IOUT 20 Operating Temperature Range Tamb NE5517N, NE5517AN AU5517T 0 C to +70 C -40 C to +125 C mA C DC Input Voltage VDC +VS to -VS Storage Temperature Range Tstg -65 C to +150 C C Lead Soldering Temperature (10 sec max) Tsld 230 C 1. For selections to a supply voltage above 22 V, contact factory. 2. The following derating factors should be applied above 25 C N package at 12.0 mW/C D package at 9.0 mW/C. 3. Buffer output current should be limited so as to not exceed package dissipation. http://onsemi.com 3 NE5517, NE5517A, AU5517 DC E
A BUFFER OUTPUT A V+ of output buffers and amplifiers are internally connected. Figure 2. Connection Diagram MAXIMUM RATINGS Rating Symbol Value Supply Voltage (Note 1) VS 44 VDC or 22 Power Dissipation, Tamb = 25 C (Still Air) (Note 2) NE5517N, NE5517AN NE5517D, AU5517D PD Unit V mW 1500 1125 Thermal Resistance, Junction-to-Ambient D Package N Package RqJA Differential Input Voltage Diode Bias Current C/W 140 94 VIN 5.0 V ID 2.0 mA IABC 2.0 mA Output Short-Circuit Duration ISC Indefinite Buffer Output Current (Note 3) IOUT 20 Operating Temperature Range NE5517N, NE5517AN AU5517T Tamb Amplifier Bias Current Operating Junction Temperature TJ 0 C to +70 C -40 C to +125 C 150 mA C C DC Input Voltage VDC +VS to -VS Storage Temperature Range Tstg -65 C to +150 C C Lead Soldering Temperature (10 sec max) Tsld 230 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended e
MAL PTC 60C 100 ohm ROD THERMISTOR NTC 50ohm 1 3 3 2 1 1 Q206 Q208, Q210, Q212 Q203, Q207, Q209 C220, C221 R4 R234 CER2 1206 X7R 50V 100N CC 50V 180P 10% 0805 CC 50V 2200pF 10% 1206 1 CC 50V 56pF 10% 0805 1.2 CC 100V 0.001F 5% 1206 CTC 0/30 56P 5% 1206 IC NE5517D RMG 1/10W 100R 5% 0805 RMG 1/10W 1K 5% 0805 RMG 1/10W 10K 1% 0805 RMG 1/10W 10K 5% 0805 RMG 1/10W 1.5K 5% 0805 RMG 1/10W 20K 1% 0805 RMG 1/10W 270R 5% 0805 RMG 1/10W 3.3K 5% 0805 RMG 1/10W 39K 5% 0805 RMG 1/10W 47R 5% 0805 RMG 1/10W 4.7K 5% 0805 RMG 1/10W 7.5K 5% 0805 RMG 1/8W 150K 1% 1206 RMG 1/8W 150K 5% 1206 RMG 1/8W 33K 5% 1206 RMG 1/8W 390K 5% 1206 RMG 1/8W 47K 5% 1206 RMG 1/8W 820R 5% 1206 DIODE LL4148 SM TR 3906 PNP SM TR 3904 HFE 100-300 SM 3 4 1 2 1 2 1 6 3 8 3 1 4 6 1 2 1 2 2 4 2 2 2 1 4 15 2 2 C100, C102, C104 C101, C103, C201, C203 C215 C110, C210 C214 C111, C211 U10 R109, R110, R127, R209, R211, R227 R102, R126, R202 R100, R101, R105, R106, R200, R201, R205, R206 R103, R203, R228 R229 R117, R121, R217, R221 R111, R113, R120,
ate the change of offset voltage due to a burst in the bias current IABC, hence eliminating the audible noise that could otherwise be heard in high quality audio applications. http://onsemi.com MARKING DIAGRAMS AU5517D AWLYWW SOIC-16 D SUFFIX CASE 751B 16 NE5517D AWLYWW 1 Features * * * * * Constant Impedance Buffers VBE of Buffer is Constant with Amplifier IBIAS Change Excellent Matching Between Amplifiers Linearizing Diodes High Output Signal-to-Noise Ratio PDIP-16 N SUFFIX CASE 648 Applications * * * * * * NE5517AN AWLYYWW NE5517N AWLYYWW 16 Multiplexers Timers Electronic Music Synthesizers Dolby HX Systems Current-controlled Amplifiers, Filters Current-controlled Oscillators, Impedances 1 A WL YY, Y WW = Assembly Location = Wafer Lot = Year = Work Week PIN CONNECTIONS N, D Packages IABCa 1 16 IABCb Da 2 15 Db +INa 3 14 +INb -INa 4 13 -INb VOa 5 12 VOb V- 6 11 V+ INBUFFERa 7 10 INBUFFERb VOBUFFERa 8 9 VOBUFFERb (Top View) ORDERING INFORMATION See detailed ordering and shipping information in t
5517/5517A ORDERING INFORMATION DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG # 16-Pin Plastic Dual In-Line Package (DIP) 0 to +70C NE5517N 0406C 16-Pin Piastic Dual !n-Line Package (DIP) 0 to +70C NE5517AN 0406C 16-Pin Small Outline (SO) Package 0 to +70C NE5517D 0005D ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER RATING UNIT Vs . Supply voltage! NE5517 36 Voc or +18 v NE5517A 44 Voc or +22 Vv Pp Power dissipation, Ta=25C (still air)2 NE5517N, NE5517AN 1500 mw NE5517D . 1125 mw VIN Differential input voltage 45 Vv Ip Diode bias current 2 mA laBc Amplifier bias current 2 mA Isc Output short-circuit duration indefinite lout Buffer output current? 20 mA Ta Operating temperature range NE5517N, NE5517AN 0G to +70 C Voc DC input voltage +V5 to -Vg Tste Storage temperature range -65C to +150C C Tsotp Lead soldering temperature (10sec max) 300 C NOTES: 1. For selections to a supply voltage above +22V, contact factory 2. The following derating factors should be applied above 25C N package at 12.0
t B ORDERING INFORMATION DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG # SOT38-4 16-Pin Plastic Dual In-Line Package (DIP) 0 to +70 C NE5517N 16-Pin Plastic Dual In-Line Package (DIP) 0 to +70 C NE5517AN SOT38-4 16-Pin Small Outline (SO) Package 0 to +70 C NE5517D SOT109-1 Dolby is a registered trademark of Dolby Laboratories Inc., San Francisco, Calif. 2001 Aug 03 2 853-0887 26833 Philips Semiconductor Product data Dual operational transconductance amplifier NE5517/NE5517A CIRCUIT SCHEMATIC V+ 11 D4 D6 Q12 Q14 Q6 Q13 7,10 Q10 8,9 Q7 Q11 2,15 VOUTPUT D3 D2 Q4 -INPUT 4,13 Q5 5,12 +INPUT 3,14 Q15 1,16 AMP BIAS INPUT Q16 Q3 Q2 D7 Q9 R1 Q1 D8 Q8 D1 D5 V- 6 SL00307 Figure 2. Circuit Schematic CONNECTION DIAGRAM B AMP BIAS INPUT B DIODE BIAS B INPUT (+) B INPUT (-) 16 15 14 13 B OUTPUT V+ (1) B BUFFER INPUT B BUFFER OUTPUT 12 11 10 9 5 6 7 8 - B + + A - 1 AMP BIAS INPUT A 2 DIODE BIAS A 3 4 INPUT (+) A INPUT (-) A OUTPUT A V- NOTE: 1. V+ of output buffers and amplifiers are internally connected. BUFFER
t B ORDERING INFORMATION TEMPERATURE RANGE ORDER CODE DWG # 16-Pin Plastic Dual In-Line Package (DIP) DESCRIPTION 0 to +70 C NE5517N SOT38-4 16-Pin Plastic Dual In-Line Package (DIP) 0 to +70 C NE5517AN SOT38-4 16-Pin Small Outline (SO) Package 0 to +70 C NE5517D SOT109-1 16-Pin Small Outline (SO) Package -40 to +125 C AU5517D SOT109-1 Dolby is a registered trademark of Dolby Laboratories Inc., San Francisco, Calif. 2002 Dec 06 2 Philips Semiconductor Product data NE5517/NE5517A/ AU5517 Dual operational transconductance amplifier CIRCUIT SCHEMATIC V+ 11 D4 D6 Q12 Q14 Q6 Q13 7,10 Q10 8,9 Q7 Q11 2,15 VOUTPUT D3 D2 Q4 -INPUT 4,13 Q5 5,12 +INPUT 3,14 Q15 1,16 AMP BIAS INPUT Q16 Q3 Q2 D7 Q9 R1 Q1 D8 Q8 D1 D5 V- 6 SL00307 Figure 2. Circuit Schematic CONNECTION DIAGRAM B AMP BIAS INPUT B DIODE BIAS B INPUT (+) B INPUT (-) 16 15 14 13 B OUTPUT V+ (1) B BUFFER INPUT B BUFFER OUTPUT 12 11 10 9 5 6 7 8 - B + + A - 1 AMP BIAS INPUT A 2 DIODE BIAS A 3 4 INPUT (+) A INPUT (-) A OUTPUT A V- NOTE: 1. V+ of outpu
5517/5517A ORDERING INFORMATION DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG # 16-Pin Plastic Dual In-Line Package (DIP) 0 to +70C NE5517N 0406C 16-Pin Plastic Dual In-Line Package (DIP) 0 to +70C NE5517AN 0406C 16-Pin Small Outline (SO) Package 0 to +70C NE5517D 0005D ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER RATING UNIT NE5517 36 VDC or 18 V NE5517A 44 VDC or 22 V NE5517N, NE5517AN 1500 mW NE5517D 1125 mW Supply voltage1 VS PD Power dissipation, TA=25C (still air)2 VIN Differential input voltage 5 V ID Diode bias current 2 mA IABC Amplifier bias current 2 mA ISC Output short-circuit duration IOUT Buffer output current3 TA Operating temperature range VDC DC input voltage TSTG Storage temperature range TSOLD Lead soldering temperature (10sec max) Indefinite NE5517N, NE5517AN 20 mA 0C to +70 C +VS to -VS -65C to +150C C 300 C NOTES: 1. For selections to a supply voltage above 22V, contact factory 2. The following derating factors should be applied above 25C N package at 12.0mW/C D pac
00 1.16 2500 S S NDC3105LT1 1 3000 .213 3000 NE5230D A SS TRANS RELAY DRIVER LOW VOLTAGE OP-AMP 1 98 .80 98 S B NE5230DR2 LOW VOLTAGE OP-AMP 1 2500 .80 2500 S B NE5230N LOW VOLTAGE OP-AMP 1 50 .92 1000 S B NE5517AN TWO CURRENT-CONTROLLED TR 1 25 .933 25 S NE5517D TWO CURRENT-CONTROLLED TR 1 48 .893 48 S NE5517DR2 TWO CURRENT-CONTROLLED TR 1 2500 .893 2500 S NE5517N TWO CURRENT-CONTROLLED TR 1 25 .893 25 S NE5532AD8 DUAL LOW NOISE OP-AMP 1 98 .96 98 S NE5532AD8R2 DUAL LOW NOISE OP-AMP 1 2500 .96 2500 S NE5532AN DUAL LOW NOISE OP-AMP 1 50 .96 1000 S NE5532D DUAL LOW NOISE OP-AMP 1 47 .533 47 S NE5532DR2 DUAL LOW NOISE OP-AMP 1 1000 .533 1000 S NE5532D8 DUAL LOW NOISE OP-AMP 1 98 .493 98 S NE5532D8R2 DUAL LOW NOISE OP-AMP 1 2500 .493 2500 S NE5532N DUAL LOW NOISE OP-AMP 1 50 .56 1000 S NE5534AD SINGLE LOW NOISE OP-AMP 1 98 1.24 98 S NE5534ADR2 SINGLE LOW NOISE OP-AMP 1 2500 1.24 2500 S NE5534AN SINGLE LOW NOISE OP-AMP 1 50 1.24 1000 S NE5534D SINGLE LOW NOISE OP-AMP 1 98 1.13 98 S NE553
Linear Products Product Specification Dual Operational Transconductance Amplifier NE5517/5517A ORDERING INFORMATION DESCRIPTION TEMPERATURE RANGE ORDER CODE 16-Pin Plastic DIP 0 to +70C NE5517N 16-Pin Plastic DIP 0 to +70C NE5517AN 16-Pin SO DIP 0 to +70C NE5517D ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER RATING UNIT Vs Supply voltage! NE5517 36 Voc or +18 Vv NE5517A 44 Voc or 22 v Pp Power dissipation, Ta = 25C (still air)? NE5517N, NE5517AN 1500 mw NE5517D 14125 mw VIN Differential input voltage 5 Vv Ip Diode bias current 2 mA labc Amplifier bias current 2 mA Isc Output short-circuit duration Indefinite lout Buffer output current? 20 mA Ta Operating temperature range NES5517N, NE5517AN Orc to +70 C Vpc DC input voltage +Vs5 to -Vs Tstc Storage temperature range -65C to +150 C Tsoip Lead soldering temperature (10sec max) 300 C NOTES: 1. For selections to a supply voltage above + 22V, contact factory. 2. The following derating factors should be applied above 25C: N package at 12.0mW/C
-feb-04 ON Semi: LM358N No possibility of further Philips manufacture due to CAEN fire. 157 NE532N/CE1037 CE1037 N LINEAR INDUSTRIAL 935021160602 T C 1 20-feb-04 20-feb-04 158 NE5517AN NE5517A N LINEAR INDUSTRIAL 933623270602 T M 1 20-feb-04 20-feb-04 159 NE5517D NE5517 D LINEAR INDUSTRIAL 933656090602 T M 1 20-feb-04 20-feb-04 160 NE5517D NE5517 D LINEAR INDUSTRIAL 933656090623 T M 1 20-feb-04 20-feb-04 ON Semi: LM2904VN Planned transfer to 3rd party pending. CPCN Notice to follow. Planned transfer to 3rd party pending. CPCN Notice to follow. Planned transfer to 3rd party pending. CPCN Notice to follow. 8 No possibility of further Philips manufacture due to CAEN fire. No possibility of further Philips manufacture due to CAEN fire. No possibility of further Philips manufacture due to CAEN fire. No possibility of further Philips manufacture due to CAEN fire. No possibility of further Philips manufacture due to CAEN fire. No possibility of further Philips manufacture due to CAEN fire.