CMT2N7000 SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is ! High Density Cell Design for Low RDS(ON) produced using high cell density, DMOS technology. These ! Voltage Controlled Small Signal Switch products have been designed to minimize on-state ! Rugged and Reliable resistance while provide rugged, reliable, and fast switching ! High Saturation Current Capability performance. It can be used in most applications requiring up to 200mA DC and can deliver pulsed currents up to 500mA. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. PIN CONFIGURATION SYMBOL TO-92 D DRAIN GATE SOURCE Top View G 1 2 S 3 N-Channel MOSFET ORDERING INFORMATION Part Number Package CMT2N7000 TO-92 ABSOLUTE MAXIMUM RATINGS Symbol Value Unit Drain Source Voltage Rating VDSS 60 V Drain-Gate Voltage (RGS = 1.0M) VDGR 60 V mA Drain