MG100G1AL2 NPN Darlington Transistor
From Toshiba
| Status | Discontinued |
| @I(C) (A) (Test Condition) | 100 |
| @V(CE) (V) (Test Condition) | 5.0 |
| Absolute Max. Power Diss. (W) | 600 |
| I(C) Abs.(A) Collector Current | 100 |
| I(CBO) Max. (A) | 1.0m |
| Military | N |
| Package | Disc-51 |
| Semiconductor Material | Silicon |
| V(BR)CBO (V) | 600 |
| V(BR)CEO (V) | 450 |
| h(FE) Min. Static Current Gain | 100 |
