SI4884BDY-T1-E3
N-CHANNEL 30-V (D-S) MOSFET

From Siliconix / Vishay

CategoryPower MOSFET
Channel ModeEnhancement
Channel TypeN
ConfigurationQuad Drain, Triple Source
Dimensions5 x 4 x 1.55 mm
Forward Diode Voltage1.1 V
Forward Transconductance45 S
Height1.55 mm
Length5 mm
Maximum Continuous Drain Current16.5 A
Maximum Drain Source Resistance0.012 Ω
Maximum Drain Source Voltage30 V
Maximum Gate Source Voltage±20 V
Maximum Operating Temperature+150 °C
Maximum Power Dissipation4.45 W
Minimum Operating Temperature-55 °C
Mounting TypeSurface Mount
Number of Elements per Chip1
Operating Temperature Range-55 to +150 °C
Package TypeSO-8
Pin Count8
Typical Gate Charge @ Vgs23.5 nC @ 10 V
Typical Input Capacitance @ Vds1525 pF @ 15 V
Typical Turn On Delay Time18 ns
Typical TurnOff Delay Time22 ns
Width4 mm

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