2N6667BG 10 A, 60 V, PNP, Si, POWER TRANSISTOR
From ON Semiconductor L.L.C.
| Status | ACTIVE |
| Case Connection | COLLECTOR |
| Collector Current-Max (IC) | 10 A |
| Collector-emitter Voltage-Max | 60 V |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| DC Current Gain-Min (hFE) | 100 |
| Mfr Package Description | TO-220AB, 3 PIN |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Power Dissipation Ambient-Max | 2 W |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| Transistor Polarity | PNP |
| Transistor Type | GENERAL PURPOSE POWER |
