NSQ1006 0.4 A, 90 V, 4.5 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
From Microsemi Corp.
Status | ACTIVE |
Channel Type | N-CHANNEL |
Configuration | SEPARATE, 4 ELEMENTS |
DS Breakdown Voltage-Min | 90 V |
Drain Current-Max (ID) | 0.4000 A |
Drain-source On Resistance-Max | 4.5 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Number of Elements | 4 |
Number of Terminals | 14 |
Operating Mode | ENHANCEMENT |
Package Body Material | CERAMIC, METAL-SEALED COFIRED |
Package Shape | RECTANGULAR |
Package Style | IN-LINE |
Power Dissipation Ambient-Max | 1.3 W |
Terminal Finish | TIN LEAD |
Terminal Form | THROUGH-HOLE |
Terminal Position | DUAL |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |