BSP298H6327XUSA1
MOSFET N-CH 400V 500MA SOT-223

From Infineon Technologies

CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C500mA (Ta)
DatasheetsBSP298
Drain to Source Voltage (Vdss)400V
FET FeatureStandard
FET TypeMOSFET N-Channel, Metal Oxide
FamilyFETs - Single
Gate Charge (Qg) @ Vgs-
Input Capacitance (Ciss) @ Vds400pF @ 25V
Mounting Type*
Other NamesBSP298H6327XUSA1TR SP001058626
Package / Case*
Packaging*
Power - Max1.8W
Rds On (Max) @ Id, Vgs3 Ohm @ 500mA, 10V
SeriesSIPMOS®
Standard Package1,000
Supplier Device Package*
Vgs(th) (Max) @ Id4V @ 1mA

External links