BSF024N03LT3G 15 A, 30 V, 0.0032 ohm, N-CHANNEL, Si, POWER, MOSFET
From Infineon Technologies AG
Status | ACTIVE |
Avalanche Energy Rating (Eas) | 125 mJ |
Case Connection | DRAIN |
Channel Type | N-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 30 V |
Drain Current-Max (ID) | 15 A |
Drain-source On Resistance-Max | 0.0032 ohm |
EU RoHS Compliant | Yes |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Lead Free | Yes |
Mfr Package Description | GREEN, METAL, WDSON-2, 3 PIN |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT |
Package Body Material | METAL |
Package Shape | RECTANGULAR |
Package Style | CHIP CARRIER |
Power Dissipation Ambient-Max | 2.2 W |
Pulsed Drain Current-Max (IDM) | 400 A |
Surface Mount | Yes |
Terminal Finish | NOT SPECIFIED |
Terminal Form | NO LEAD |
Terminal Position | BOTTOM |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |