Did you mean: AUIRFR1018E
Product Datasheet Search Results:
10 Pages, 617 KB, Original- AUIRFR1018E
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 60V 79A Automotive 3-Pin(2+Tab) DPAK Tube
10 Pages, 371 KB, Original- IRFR1018EPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 60V 79A 3-Pin(2+Tab) DPAK Tube
10 Pages, 371 KB, Original- IRFR1018ETRPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 60V 79A 3-Pin(2+Tab) DPAK T/R
11 Pages, 610 KB, Original- AUIRFR1018E
- International Rectifier
- MOSFET AUTO 60V 1 N-CH HEXFET 8.4mOhms
11 Pages, 610 KB, Original- AUIRFR1018ETR
- International Rectifier
- MOSFET AUTO 60V 1 N-CH HEXFET 8.4mOhms
11 Pages, 610 KB, Original- AUIRFR1018ETRL
- International Rectifier
- MOSFET AUTO 60V 1 N-CH HEXFET 8.4mOhms
11 Pages, 610 KB, Original- AUIRFR1018ETRR
- International Rectifier
- MOSFET AUTO 60V 1 N-CH HEXFET 8.4mOhms
10 Pages, 371 KB, Original- IRFR1018EPBF
- International Rectifier
- MOSFET N-CH 60V 79A DPAK - IRFR1018EPBF
10 Pages, 371 KB, Original- IRFR1018ETRLPBF
- International Rectifier
- 56 A, 60 V, 0.0084 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
10 Pages, 371 KB, Original- IRFR1018ETRPBF
- International Rectifier
- MOSFET N-CH 60V 56A DPAK - IRFR1018ETRPBF
10 Pages, 371 KB, Original- IRFR1018ETRRPBF
- International Rectifier
- MOSFET N-CH 60V 79A DPAK - IRFR1018ETRRPBF
Product Details Search Results:
Infineon.com/AUIRFR1018E
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"110(W)","Continuous Drain Current":"79(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"60(V)","Drain-Source On-Res":"0.0084(ohm)","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1554 Bytes - 19:48:41, 16 November 2024
Infineon.com/IRFR1018EPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"79(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Rail/Tube","Power Dissipation":"110(W)","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1523 Bytes - 19:48:41, 16 November 2024
Infineon.com/IRFR1018ETRPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"79(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Power Dissipation":"110(W)","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1533 Bytes - 19:48:41, 16 November 2024
Irf.com/AUIRFR1018E
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Family":"FETs - Single","Product Photos":"TO-252-3","Vgs(th) (Max) @ Id":"4V @ 100\u00b5A","Series":"HEXFET\u00ae","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Supplier Device Package":"D-Pak","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Datasheets":"AUIRFR1018E","Rds On (Max) @ Id, Vgs":"8.4 mOhm @ 47A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"1...
1705 Bytes - 19:48:41, 16 November 2024
Irf.com/AUIRFR1018ETR
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"88 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"56 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0084 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"315 A","Channel Type":"N-CHANN...
1618 Bytes - 19:48:41, 16 November 2024
Irf.com/AUIRFR1018ETRL
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Family":"FETs - Single","Product Photos":"TO-252-3","Vgs(th) (Max) @ Id":"4V @ 100\u00b5A","Series":"HEXFET\u00ae","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Supplier Device Package":"D-Pak","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Datasheets":"AUIRFR1018E","Rds On (Max) @ Id, Vgs":"8.4 mOhm @ 47A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Pow...
1746 Bytes - 19:48:41, 16 November 2024
Irf.com/AUIRFR1018ETRR
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"88 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"56 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0084 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"315 A","Channel Type":"N-CHANN...
1622 Bytes - 19:48:41, 16 November 2024
Irf.com/IRFR1018EPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 100\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"56A (Tc)","Gate Charge (Qg) @ Vgs":"69nC @ 10V","Product Photos":"TO-252-3","PCN Assembly/Origin":"Mosfet Backend Wafer Processing 23/Oct/2013 Warehouse Transfer 29/Jul/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"8.4 mOhm @ 47A,...
2077 Bytes - 19:48:41, 16 November 2024
Irf.com/IRFR1018ETRLPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"88 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"56 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0084 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"315 A","Channel Type":"N-CHANN...
1613 Bytes - 19:48:41, 16 November 2024
Irf.com/IRFR1018ETRPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 100\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"56A (Tc)","Gate Charge (Qg) @ Vgs":"69nC @ 10V","Product Photos":"TO-252-3","PCN Assembly/Origin":"Mosfet Backend Wafer Processing 23/Oct/2013 Warehouse Transfer 29/Jul/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"8.4 mOhm @ 47A,...
2092 Bytes - 19:48:41, 16 November 2024
Irf.com/IRFR1018ETRRPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 100\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"56A (Tc)","Gate Charge (Qg) @ Vgs":"69nC @ 10V","Product Photos":"TO-252-3","PCN Assembly/Origin":"Mosfet Backend Wafer Processing 23/Oct/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"8.4 mOhm @ 47A, 10V","Datasheets":"IRF(R,U)101...
1837 Bytes - 19:48:41, 16 November 2024
